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STPSC10H065 STMicroelectronics power Schottky silicon carbide diode Datasheet

STPSC10H065DI 다이오드 실리콘 카바이드 쇼트키 650V 10A 스루홀 TO-220AC ins


STMicroelectronics
STPSC10H065
Part Number STPSC10H065
Manufacturer STMicroelectronics (https://www.st.com/)
Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ri...
Features
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• High forward surge capability
• Insulated package TO-220AC Ins:
  – Insulated voltage: 2500 VRMS
  – Typical package capacitance: 7 pF
• Power efficient product
• ECOPACK®2 compliant component Applications
• Switch mode power supply
• PFC
• DCDC converters
• LLC topologies
• Boost diode Product status STPSC10H065 Product summary Symbol Value IF(AV) 10 A VRRM 650 V Tj(max.) 175 °C Product label Description This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode...

Document Datasheet STPSC10H065 datasheet pdf (396.57KB)
Distributor Distributor
DigiKey
Stock 961 In Stock
Price
500 units: 2280.908 KRW
100 units: 2332.06 KRW
50 units: 2720.8 KRW
1 units: 3433 KRW
BuyNow BuyNow BuyNow (Manufacturer a STMicroelectronics)




STPSC10H065 Distributor

part
STMicroelectronics
STPSC10H065DI
SCHOTTKY RECT, SINGLE, 650V, TO-220AC
1000 units: 3152 KRW
500 units: 3183 KRW
100 units: 3214 KRW
10 units: 3245 KRW
1 units: 3276 KRW
Distributor
element14 Asia-Pacific

4879 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065DI
다이오드 실리콘 카바이드 쇼트키 650V 10A 스루홀 TO-220AC ins
500 units: 2280.908 KRW
100 units: 2332.06 KRW
50 units: 2720.8 KRW
1 units: 3433 KRW
Distributor
DigiKey

961 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065G2-TR
SiC Schottky Diodes 650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
1 units: 3.47 USD
10 units: 2.92 USD
100 units: 2.36 USD
250 units: 2.23 USD
500 units: 2.1 USD
1000 units: 2.09 USD
2000 units: 1.68 USD
Distributor
Mouser Electronics

1720 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065G-TR
650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
1 units: 3.11 USD
10 units: 2.62 USD
100 units: 2.12 USD
250 units: 2.1 USD
500 units: 1.88 USD
Distributor
STMicroelectronics

1176 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065G2-TR
Silicon Carbide Diodes,STPSC10H065G2, RL
500 units: 27.276 HKD
250 units: 28.118 HKD
100 units: 28.988 HKD
10 units: 29.884 HKD
Distributor
RS

185 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065D
Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube
50 units: 3.07 USD
10 units: 3.41 USD
3 units: 3.86 USD
1 units: 4.3 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
STPSC10H065D
INSTOCK
No price available
Distributor
Chip 1 Exchange

26026 In Stock
No Longer Stocked
part
STMicroelectronics
STPSC10H065DI
Diode Schottky 650V 10A 2-Pin TO-220AC Tube - Rail/Tube (Alt: STPSC10H065DI)
100000 units: 1.65083 USD
10000 units: 1.68878 USD
8000 units: 1.72673 USD
6000 units: 1.76468 USD
4000 units: 1.80263 USD
2000 units: 1.84058 USD
1000 units: 1.87853 USD
Distributor
Avnet Americas

678 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065DI
Diode Schottky 650V 10A 2-Pin TO-220AC Tube (Alt: STPSC10H065DI)
No price available
Distributor
Avnet Silica

4000 In Stock
BuyNow BuyNow
part
STMicroelectronics
STPSC10H065G-TR
No price available
Distributor
Bristol Electronics

20 In Stock
No Longer Stocked





STPSC10H065 Similar Datasheet

Part Number Description
STPSC10H065-Y
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Schottky silicon carbide diode
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions. DS12496 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10H065BY-TR Characteristics 1 Characteristics Table 1. Absolute rat...
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This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains. DS13179 - Rev 2 - March 2021 For further information co...
STPSC10H065G2
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high surge silicon carbide power Schottky diode
This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1. The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient ...




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