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S-LN4812LT1G |
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| Part Number | S-LN4812LT1G |
| Manufacturer | LRC |
| Description | LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), [email protected], Ids@5A = 52mΩ Features Advanced trench process technology High Density ... |
| Features |
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LN4812LT1G S-LN4812LT1G
LN4812LT3G S-LN4812LT3G
Marking N48 N48
Shipping 3000/Tape&Reel 10000/Tape&Reel
LN4812LT1G S-LN4812LT1G
3
1 2
SOT – 23 (TO –236AB) N - Channel 3 1 2 Maximum Ratings and Thermal Characteristics (TA = ... |
| Document |
 S-LN4812LT1G Data Sheet
PDF 279.56KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S-LN2302ALT1G |
LRC |
20V N-Channel Enhancement-Mode MOSFET |
|
| 2 | S-LN2308LT1G |
LRC |
60V N-Channel Enhancement-Mode MOSFET |
|
| 3 | S-LNST3904F3T5G |
LRC |
NPN General Purpose Transistor |
|
| 4 | S-LNST3906F3T5G |
LRC |
PNP General Purpose Transistor |
|
| 5 | S-LNTA4001NT1G |
LRC |
Small Signal MOSFET |
|
| 6 | S-LNTA7002NT1G |
LRC |
Small Signal MOSFET |
|
Desde 2024. D4U Semiconductor.
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