Busque con el número de pieza junto con el fabricante o la descripción
VB20120C-E3 |
Click to view a larger image
| Part Number | VB20120C-E3 |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TO-220AB TM... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-263AB K TO-262AA K 2 1 VB20120C PIN 1 K PIN 2 HEATSINK VI20120C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Packag... |
| Document |
 VB20120C-E3 Data Sheet
PDF 204.14KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB20120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB20120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB20120S |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB20120S-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB20120SG |
Vishay |
High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 6 | VB20120SG-E3 |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
Desde 2024. D4U Semiconductor.
|