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MTDN3018S6R |
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| Part Number | MTDN3018S6R |
| Manufacturer | CYStech |
| Description | CYStech Electronics Corp. N-CHANNEL MOSFET (dual transistors) MTDN3018S6R Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7 Features • Low on-resistance • High ES... |
| Features |
• Low on-resistance • High ESD capability • High speed switching • Low-voltage drive(4V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Equivalent Circuit MTDN3018S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Reverse Current Power Dissipation ESD susceptibility Junction Temperature Storage Temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP Pd Tj Tstg Note : 1. Pulse test, pulse width≤... |
| Document |
 MTDN3018S6R Data Sheet
PDF 221.18KB |
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