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MTB08N04J3 |
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| Part Number | MTB08N04J3 |
| Manufacturer | CYStech |
| Description | CYStech Electronics Corp. Spec. No. : C892J3 Issued Date : 2014.05.29 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB08N04J3 BVDSS ID @VGS=10V RDS(ON)@VGS=10V, ID=15A ... |
| Features |
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit MTB08N04J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB08N04J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB08N04J3 CYStek Product Specification CYStech Electronics... |
| Document |
 MTB08N04J3 Data Sheet
PDF 311.51KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTB080C10Q8 |
Cystech Electonics |
N- and P-channel enhancement mode power MOSFET |
|
| 2 | MTB080N15J3 |
CYStech |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | MTB080P06J3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 4 | MTB080P06L3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 5 | MTB080P06M3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
| 6 | MTB080P06N3 |
Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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