Busque con el número de pieza junto con el fabricante o la descripción
2SD2045 |
Click to view a larger image
| Part Number | 2SD2045 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V ·Minimum Lot-t... |
| Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 3mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10
mA
hFE
DC Current Gain
IC= 3A; VCE= 2V
2000
fT
Current-Gain—Bandwidth Product
IE= -1A; VCE= 12V
50
MHz
COB
Output Capacitance
IE= 0; VCB= 10V,ftest= 1MHz
70
pF
Switching times
ton
Turn-on Tim... |
| Document |
 2SD2045 Data Sheet
PDF 203.20KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2041 |
Rohm |
TAPED POWER TRANSISTOR |
|
| 2 | 2SD2045 |
Sanken electric |
Silicon NPN Transistor |
|
| 3 | 2SD2045 |
SeCoS |
NPN-PNP Transistors |
|
| 4 | 2SD2046 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SD2047 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD2047R |
Fuji Electric |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
|