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RU1H35K |
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| Part Number | RU1H35K |
| Manufacturer | Ruichips |
| Description | Applications • High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source V... |
| Features |
• 100V/40A, RDS (ON) =21mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description Applications • High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximu... |
| Document |
 RU1H35K Data Sheet
PDF 267.39KB |
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Desde 2024. D4U Semiconductor.
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