TSM085N03PQ33 |
Part Number | TSM085N03PQ33 |
Manufacturer | Taiwan Semiconductor |
Description | only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liabil... |
Features |
nction to Case
RӨJA RӨJC
N-Channel MOSFET
Limit 30 ±20 48 30 192 45 35 150
-55 to +150
Limit 62 3.6
Unit V V A A A mJ W °C °C
Unit °C/W °C/W
1/5 Version: A14
TSM085N03PQ33
30V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage
VGS = 0V, ID = 250µA VGS = 10V, ID = 16A VGS = 4.5V, ID = 8A VDS = VGS, ID = 250µA
BVDSS 30 -- -- V
-- 6.2 8.5
RDS(ON)
--
9
mΩ 13
VGS(TH)
1.2 1.6 2.5
V
Zero Gate Voltage Drain Cur... |
Document |
TSM085N03PQ33 Data Sheet
PDF 485.33KB |
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