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TSM080N03PQ56 |
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| Part Number | TSM080N03PQ56 |
| Manufacturer | Taiwan Semiconductor |
| Description | only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liabil... |
| Features |
sistance - Junction to Ambient
RӨJC RӨJA
Limit 30 ±20 55 35 220 45 54
-55 to +150 -55 to +150
Limit 2.3 62
Unit V V A A A mJ W ℃ ℃
Unit
℃/W
1/5 Version: A14
TSM080N03PQ56
30V N-Channel Power MOSFET
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage
VGS = 0V, ID = 250µA VGS = 10V, ID = 16A VGS = 4.5V, ID = 8A VDS = VGS, ID = 250µA
BVDSS 30 -- -- V
RDS(on)
-- 6.5 8 mΩ -- 9.5 12.5
VGS(TH)
1
1.6 2.5
V
Zero Gate Voltage Drain Current... |
| Document |
 TSM080N03PQ56 Data Sheet
PDF 539.38KB |
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