TSM080N03E Taiwan Semiconductor N-Channel Power MOSFET Datasheet. existencias, precio

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TSM080N03E

Taiwan Semiconductor
TSM080N03E
TSM080N03E TSM080N03E
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Part Number TSM080N03E
Manufacturer Taiwan Semiconductor
Description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liabil...
Features
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
● G-S ESD Protection Diode Embedded APPLICATION
● Vcore / MB
● POL Application
● SMPS 2nd SR KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = 10V VGS = 4.5V Qg 30 8 12.5 7.5 V mΩ nC PDFN56 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C VDS VGS ID IDM 30 ±20 55 35 220 Tota...

Document Datasheet TSM080N03E Data Sheet
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