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TSM060N03CP |
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| Part Number | TSM060N03CP |
| Manufacturer | Taiwan Semiconductor |
| Description | only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liabil... |
| Features |
stance - Junction to Ambient
Symbol RӨJC RӨJA
N-Channel MOSFET
Limit 30 ±20 80 51 320 88 42 54 0.43 150
-55 to +150
Limit 2.3 62
Unit V V A A A mJ A W
W/ºC ºC oC
Unit oC/W oC/W
1/5 Version: A14
TSM060N03CP
30V N-Channel Power MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance
VGS = 0V, ID = 250µA VGS = 10V, ID = 20A VGS = 4.5V, ID = 10A
BVDSS 30 -- -- V -- 4.8 6
RDS(ON) -- 6.5 9 mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH) 1 1.6 2.5 V
Z... |
| Document |
 TSM060N03CP Data Sheet
PDF 329.24KB |
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Desde 2024. D4U Semiconductor.
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