S-LP9435LT1G |
Part Number | S-LP9435LT1G |
Manufacturer | LRC |
Description | LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 70mΩ RDS(ON), [email protected], [email protected] = 100mΩ Features Advanced trench process technology High ... |
Features |
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
Ordering Information
Device
LP9435LT1G S-LP9435LT1G
LP9435LT3G S-LP9435LT3G
Marking
P94 P94
Shipping
3000/Tape&Reel
10000/Tape&Reel
LP9435LT1G S-LP9435LT1G
3
1 2
SOT – 23 (TO –236AB) 3D G 1 2S Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise n... |
Document |
S-LP9435LT1G Data Sheet
PDF 403.06KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | S-LP2301ALT1G |
LRC |
P-Channel MOSFET | |
2 | S-LP2305DSLT1G |
LRC |
P-Channel MOSFET | |
3 | S-LP3401LT1G |
LRC |
P-Channel MOSFET | |
4 | S-LP3407LT1G |
LRC |
P-Channel MOSFET | |
5 | S-LP3415ELT1G |
LRC |
P-Channel MOSFET | |
6 | S-L1SS360TT1G |
LRC |
Monolithic Dual Switching Diode |