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BF620 |
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| Part Number | BF620 |
| Manufacturer | WEJ |
| Description | RoHS BF620 BF620 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 50 mA OV(BR)CBO: 300 V Operating and storage junction te... |
| Features |
Power dissipation
TPCM: 500 mW (Tamb=25℃)
.,LCollector current
ICM: Collector-base voltage
50 mA
OV(BR)CBO:
300 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain
Collector-emitter saturation voltage
ETransition frequency
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO h... |
| Document |
 BF620 Data Sheet
PDF 133.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF620 |
NXP |
NPN high-voltage transistors |
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| 2 | BF620 |
GME |
NPN high-voltage Transistors |
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| 3 | BF620 |
PLANETA |
NPN Silicon High Voltage Medium-Power Transistor |
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| 4 | BF620 |
Kexin |
Silicon NPN epitaxial planer type Transistors |
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| 5 | BF620 |
Jin Yu Semiconductor |
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| 6 | BF621 |
NXP |
PNP high-voltage transistors |
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| 7 | BF622 |
NXP |
NPN high-voltage transistors |
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| 8 | BF622 |
GME |
NPN high-voltage Transistors |
|
| 9 | BF622 |
Kexin |
Silicon NPN epitaxial planer type Transistors |
|
| 10 | BF623 |
NXP |
PNP high-voltage transistors |
|
Desde 2024. D4U Semiconductor.
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