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ACE2006M |
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| Part Number | ACE2006M |
| Manufacturer | ACE Technology |
| Description | ACE2006M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer powe... |
| Features |
• Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 60 ±20 19 75 42 50 -55 to 150 Unit V V A A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to... |
| Document |
 ACE2006M Data Sheet
PDF 459.81KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ACE2010M |
ACE Technology |
P-Channel MOSFET |
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| 2 | ACE2020M |
ACE Technology |
N-Channel MOSFET |
|
| 3 | ACE2301 |
ACE Technology |
P-Channel Enhancement Mode MOSFET |
|
| 4 | ACE2302 |
ACE Technology |
N-Channel Enhancement Mode MOSFET |
|
| 5 | ACE2302M |
ACE Technology |
N-Channel MOSFET |
|
| 6 | ACE2303 |
ACE Technology |
P-Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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