Busque con el número de pieza junto con el fabricante o la descripción
AP2602MT |
Click to view a larger image
| Part Number | AP2602MT |
| Manufacturer | Advanced Power Electronics |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Features |
10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25 +20 260 57.3 45.8 650 104
5 45 -55 to 150 -55 to 150
V V A A A A W W mJ ℃ ℃
Thermal Data
Symbol
... |
| Document |
 AP2602MT Data Sheet
PDF 69.49KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2602 |
BCD Semiconductor |
Octave Remote Resistor-programmable Temperature Switches |
|
| 2 | AP2602GY |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 3 | AP2602GY-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 4 | AP2602GY-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET |
|
| 5 | AP2602Y |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
| 6 | AP2603GY |
Advanced Power Electronics |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
|