BAS521 |
Part Number | BAS521 |
Manufacturer | CDIL |
Description | SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Continuous Forward Current Ts < 90 ºC Repetitive Peak Forward Voltage tP = 1ms; δ = 0.25 *IF IFRM Non Repetitive Peak ... |
Features |
AL CHARACTERISTICS (Ta=25º C unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Breakdown Voltage
VBR
IR=100mA
300
Forward Voltage
***VF
IF=100mA
Reverse Current
IR VR=250V
VR=250V, Ta=150ºC
Reverse Recovery Time, when Switched from
IF=30mA to IR=30mA, RL=100Ω, measured at IR=3mA
trr
IF=5mA
Diode Capacitance
Cd VR=0V, f=1MHz
***Pulse test:- tp=300µ s; δ =0.02
BAS521 Rev 170210E
MAX
1.1 0.15 100 50 5.0
UNIT V V mA mA
ns
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
BAS521
SOD- 523 Formed SMD Package
BAS521 Rev 170210E Continental Device Ind... |
Document |
BAS521 Data Sheet
PDF 327.43KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAS52 |
Infineon Technologies AG |
Silicon Schottky Diode | |
2 | BAS52-02V |
Infineon Technologies AG |
Silicon Schottky Diode | |
3 | BAS520-02V |
Vishay Siliconix |
Small Signal Schottky Diode | |
4 | BAS521 |
NXP Semiconductors |
High voltage switching diode | |
5 | BAS521 |
Diodes |
HIGH VOLTAGE SWITCHING DIODE | |
6 | BAS521 |
LGE |
High voltage switching diode |