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S-L2SA1365FLT3G |
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| Part Number | S-L2SA1365FLT3G |
| Manufacturer | Leshan Radio Company |
| Description | L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●E... |
| Features |
j Junction temperature Tstg Storage temperature
Ratings -25 -20 -4 -7 00 150 ＋125
-55～＋125
Unit V V V mA mW ℃ ℃
3 COLLECTOR
1 BASE
ORDERING INFORMATION
2 EMITTER
Device
Marking
L2SA1365ELT1G S-L2SA1365ELT1G L2SA1365ELT3G S-L2SA1365ELT3G L2SA1365FLT1G
S-L2SA1365FLT1G L2SA1365FLT3G S-L2SA1365FLT3G
L2SA1365GLT1G S-L2SA1365GLT1G
L2SA1365GLT3G S-L2SA1365GLT3G
AE AE AF AF AG AG
Shipping 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
C to B break down voltage E to B break down voltage C... |
| Document |
 S-L2SA1365FLT3G Data Sheet
PDF 677.20KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S-L2SA1365FLT1G |
Leshan Radio Company |
General Purpose Transistor |
|
| 2 | S-L2SA1365ELT1G |
Leshan Radio Company |
General Purpose Transistor |
|
| 3 | S-L2SA1365ELT3G |
Leshan Radio Company |
General Purpose Transistor |
|
| 4 | S-L2SA1365GLT1G |
Leshan Radio Company |
General Purpose Transistor |
|
| 5 | S-L2SA1365GLT3G |
Leshan Radio Company |
General Purpose Transistor |
|
| 6 | S-L2SC2412KQMT1G |
Leshan Radio Company |
General Purpose Transistor |
|
Desde 2024. D4U Semiconductor.
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