ISC6053AM1 |
Part Number | ISC6053AM1 |
Manufacturer | Isahaya Electronics |
Description | ISC6053AM1 is a silicon NPN epitaxial type transistor Designed with high collector current, low VCE(sat). FEATURE ●High collector current IC(MAX)=650mA ●Low collector to emitter saturation voltage VCE... |
Features |
o E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Gain band width product
*:It shows hFE classification in below table.
Test condition
IC=100uA, IB=0 IC=10uA, IE=0 IE=10uA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=4V,IC=100mA IC=500mA, IB=25mA VCE=6V,IE=-10mA,
Limits Min Typ Max
Unit
20 V
25 V
4V
1 uA
1 uA
150 800 -
0.3 0.5
V
290 MHz
ITEM hFE
EFG 150~300 250~500 400~800
ISC6053AM1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
T... |
Document |
ISC6053AM1 Data Sheet
PDF 146.63KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | ISC60NM60L |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | ISC-1008 |
Vishay Siliconix |
Surface Mount Wirewound Shielded Inductor | |
3 | ISC-1210 |
Vishay Siliconix |
Shielded Inductors | |
4 | ISC-1812 |
Vishay Siliconix |
Shielded Inductors | |
5 | ISC009N06LM5 |
Infineon |
MOSFET | |
6 | ISC011N03L5S |
Infineon |
MOSFET |