V10D120CHM3 |
Part Number | V10D120CHM3 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com V10D120C-M3, V10D120CHM3 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A eSMP® Series SMPD (TO-263AC)... |
Features |
• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and ... |
Document |
V10D120CHM3 Data Sheet
PDF 116.23KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | V10D120C |
Vishay |
Trench MOS Barrier Schottky Rectifier | |
2 | V10D120C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V10D100C |
Vishay |
Dual High Voltage (Trench MOS Barrier Schottky Rectifier | |
4 | V10D100C-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V10D100CHM3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | V10D170C |
Vishay |
Trench MOS Barrier Schottky Rectifier |