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H7N0307AB |
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| Part Number | H7N0307AB |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline ... |
| Features |
• Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Sep 07, 2005 page 1 of 6 H7N0307AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. ... |
| Document |
 H7N0307AB Data Sheet
PDF 73.80KB |
Similar Datasheet
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| 1 | H7N0307AB |
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| 2 | H7N0307L |
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| 3 | H7N0307LD |
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| 4 | H7N0307LD |
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| 5 | H7N0307LM |
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| 6 | H7N0307LM |
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