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HCD6N70S |
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| Part Number | HCD6N70S |
| Manufacturer | SemiHow |
| Description | HCD6N70S_HCU6N70S June 2015 HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Lo... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 7 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested
BVDSS = 700 V RDS(on) typ ȍ ID = 3.0 A
D-PAK I-PAK
2
1 3
HCD6N70S
1
2 3
HCU6N70S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain C... |
| Document |
 HCD6N70S Data Sheet
PDF 420.13KB |
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