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2SJ552 |
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| Part Number | 2SJ552 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High s... |
| Features |
• Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 D 1 23 123 G S 1. Gate 2. Drain 3. Source 4. Drain Rev.4.00 Sep 07, 2005 page 1 of 8 2SJ552(L), 2SJ552(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature St... |
| Document |
 2SJ552 Data Sheet
PDF 89.77KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ550 |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 2 | 2SJ550 |
Renesas |
P-Channel MOSFET |
|
| 3 | 2SJ550L |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | 2SJ550L |
Renesas |
P-Channel MOSFET |
|
| 5 | 2SJ550S |
Hitachi Semiconductor |
Silicon P-Channel MOSFET |
|
| 6 | 2SJ550S |
Renesas |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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