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KDV214A |
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| Part Number | KDV214A |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for ... |
| Features |
High Capacitance Ratio : C2V/C25V=6.3(Min.) Low Series Resistance : rS=0.57 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
KDV214A
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
G
H
2 D
MM 1. ANODE 2. CATHODE
J C
I
DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MA... |
| Document |
 KDV214A Data Sheet
PDF 360.21KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KDV214 |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 2 | KDV214E |
KEC |
VARIABLE CAPACITANCE DIODE |
|
| 3 | KDV214EA |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
| 4 | KDV214V |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
| 5 | KDV214VA |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
| 6 | KDV215 |
KEC |
SILICON EPITAXIAL PLANAR DIODE |
|
Desde 2024. D4U Semiconductor.
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