SPA2318Z RF Micro Devices POWER AMPLIFIER Datasheet. existencias, precio

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SPA2318Z

RF Micro Devices
SPA2318Z
SPA2318Z SPA2318Z
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Part Number SPA2318Z
Manufacturer RF Micro Devices
Description RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecul...
Features
 High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3
 On-Chip Active Bias Control
 High Gain: 24dB Typ. at 1960 MHz
 Patented High Reliability GaAs HBT Technology
 Surface-Mountable Plastic Package Applications
 WCDMA Systems
 PCS Systems
 Multi-Carrier Applications Parameter Specification Min. Typ. Max. Unit Condition Frequency of Operation 1700 2200 MHz Output Power at 1dB Compression [1] 29.5 dBm 1960 MHz 29.5 dBm 2140 MHz Adjacent Channel Power [1] -55.0 -50.0 -47.0 dBc 1960MHz, IS-95 ...

Document Datasheet SPA2318Z Data Sheet
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