SPA2118Z RF Micro Devices POWER AMPLIFIER Datasheet. existencias, precio

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SPA2118Z

RF Micro Devices
SPA2118Z
SPA2118Z SPA2118Z
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Part Number SPA2118Z
Manufacturer RF Micro Devices
Description RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular ...
Features
 High Linearity Performance
 +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
 +47dBm Typ. OIP3
 High Gain: 33dB Typ.
 On-Chip Active Bias Control
 Patented high Reliability GaAs HBT Technology
 Surface-Mountable Plastic Package Applications
 IS-95 CDMA Systems
 Multi-Carrier Applications
 AMPS, ISM Applications Parameter Frequency of Operation Output Power at 1dB Compression Adjacent Channel Power Min. 810 Specification Typ. 900 29.0 -55.0 Small Signal Gain 31.5 Input VSWR Output Third Order Intercept Point Noise Figure Device Current 360 Device Voltage Thermal Resistance (J...

Document Datasheet SPA2118Z Data Sheet
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