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SGB2433Z |
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| Part Number | SGB2433Z |
| Manufacturer | RF Micro Devices |
| Description | RFMD’s SGB2433Zis a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and proc... |
| Features |
a Class 1C ESD rating, low thermal resistance, and unconditional stability. The SGB2433Z product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 and an exter-
nal bias inductor choke is required for the application band.
Optimum Technology Matching® Applied
Vbias NC NC VCC
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
NC NC NC GND
NC NC RFIN NC
Active Bias
NC NC RFOUT NC
Features
High Reliability SiGe HBT Technology Robust Class... |
| Document |
 SGB2433Z Data Sheet
PDF 230.50KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SGB2400 |
RF Micro Devices |
DC TO 4GHz ACTIVE BIAS SiGe HBT MMIC AMPLIFIER |
|
| 2 | SGB20N60 |
Infineon |
Fast S-IGBT in NPT-technology |
|
| 3 | SGB20UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 4 | SGB25UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 5 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 6 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
Desde 2024. D4U Semiconductor.
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