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SGB2400 |
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| Part Number | SGB2400 |
| Manufacturer | RF Micro Devices |
| Description | RFMD’s SGB2400 is a high performance Darlington SiGe HBT MMIC amplifier with on-chip active bias circuitry. The active bias network provides stable current over temperature and process Beta variations... |
| Features |
High Reliability SiGe HBT Technology Robust Class 1C ESD P1dB = 6.9dBm at 1950MHz IP3 = 18.0dBm at 1950MHz Die Size: 0.75mm x 0.70mm Applications LO Buffer Amp RF Pre-driver and RF Receive Path Military Communications Test and Instrumentation Parameter Specification Min. Typ. Max. Unit Condition Frequency of Operation DC 4000 MHz Small Signal Gain 19.1 dB Freq = 850MHz 15.7 17.2 18.7 dB Freq = 1950MHz 16.2 dB Freq = 2400MHz Output Power at 1dB Compression 5.4 7.7 6.9 dBm dBm Freq = 850MHz Freq = 1950MHz Output IP3 6.2 19.5 dBm dBm Freq = 2400MHz Freq... |
| Document |
 SGB2400 Data Sheet
PDF 113.83KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SGB2433Z |
RF Micro Devices |
DC to 4GHZ ACTIVE BIAS GAIN BLOCK |
|
| 2 | SGB20N60 |
Infineon |
Fast S-IGBT in NPT-technology |
|
| 3 | SGB20UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
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| 4 | SGB25UF |
SSDI |
HIGH VOLTAGE RECTIFIER |
|
| 5 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block |
|
| 6 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK |
|
Desde 2024. D4U Semiconductor.
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