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STP110N8F7 |
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| Part Number | STP110N8F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code STP110N8F7
VDS 80 V
RDS(on)max 7.5 mΩ
ID 80 A
PTOT 170 W
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STP110N8F7 Table 1: Device summary Marking Package 110N8F7 TO-220 Packagi... |
| Document |
 STP110N8F7 Data Sheet
PDF 566.06KB |
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Desde 2024. D4U Semiconductor.
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