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STGW30M65DF2 |
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| Part Number | STGW30M65DF2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in perform... |
| Features |
6 µs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 50 A Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive ... |
| Document |
 STGW30M65DF2 Data Sheet
PDF 562.55KB |
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Desde 2024. D4U Semiconductor.
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