WNM4001 |
Part Number | WNM4001 |
Manufacturer | Will Semiconductor |
Description | The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in... |
Features |
z Trench N-Channel z Supper high density cell design for extremely low
Rds(on) z Exceptional ON resistance and maximum DC
current capability z Small package design with SOT-523
WNM4001
Http://www.willsemi.com
Top
D 3
12 GS
SOT-523
D 3
12 GS
Pin Configuration
3
N3 *
12
N3 = Device Code * = Month
Marking
Applications
z Driver: Relays, Solenoids, Lamps, Hammers z Power supply converters circuit z Load/Power Switching for potable device
Order Information
Device
Package
WNM4001-3/TR SOT-523
Shipping 3000/Tape&Reel
Will Semiconductor Ltd.
1
Nov, 2011 - Rev. 1.3
Absolute Maximum Ratings
(T... |
Document |
WNM4001 Data Sheet
PDF 108.86KB |
Similar Datasheet