70T03GP |
Part Number | 70T03GP |
Manufacturer | Advanced Power Electronics |
Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 30V 9mΩ 6... |
Features |
ng Junction Temperature Range
G D S
Rating 30 ±20 60 43 195 53 0.36
-55 to 175 -55 to 175
TO-220(P)
Units V V A A A W
W/℃ ℃ ℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max. Max.
Value 2.8 62
Units ℃/W ℃/W
Data and specifications subject to change without notice
200411052-1/4
AP70T03GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th) gfs IDSS
IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-So... |
Document |
70T03GP Data Sheet
PDF 59.17KB |
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