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STH360N4F6-2 |
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| Part Number | STH360N4F6-2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all ... |
| Features |
N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
Datasheet − preliminary data
Order code STH360N4F6-2
VDSS 40 V
RDS(on) max
ID
< 1.25 mΩ 180 A(1)
1. Current limited by package
■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram... |
| Document |
 STH360N4F6-2 Data Sheet
PDF 232.91KB |
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Desde 2024. D4U Semiconductor.
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