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STL92N10F7AG |
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| Part Number | STL92N10F7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes G(4) STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and... |
| Features |
Order code
VDS
RDS(on) max
STL92N10F7AG 100 V 0.0095 Ω
ID 16 A
PTOT 5W
• Designed for automotive applications and AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness • Wettable flank package Applications • Switching applications Description This N-channel Power MOSFET utilizes G(4) STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more 12 34 ... |
| Document |
 STL92N10F7AG Data Sheet
PDF 479.51KB |
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Desde 2024. D4U Semiconductor.
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