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STL50DN6F7 |
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| Part Number | STL50DN6F7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate ... |
| Features |
Order code STL50DN6F7
VDS 60 V
RDS(on) max. 11 mΩ
ID 57 A
Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL50DN6F7 Marking 50DN6F7 Table 1: Device summary Package PowerFLAT™ 5x6 double isl... |
| Document |
 STL50DN6F7 Data Sheet
PDF 747.62KB |
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