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STB18N60DM2 |
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| Part Number | STB18N60DM2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable f... |
| Features |
Order code
VDS
RDS(on) max.
STB18N60DM2
600 V
0.295 Ω
• Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 12 A Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift conv... |
| Document |
 STB18N60DM2 Data Sheet
PDF 632.34KB |
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Desde 2024. D4U Semiconductor.
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