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EA30QS10-F |
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| Part Number | EA30QS10-F |
| Manufacturer | Nihon Inter Electronics |
| Description | 3A Avg. 100 Volts SBD EA30QS10-F INSTANTANEOUS FORWARD CURRENT (A) AVERAGE REVERSE POWER DISSIPATION (W) 20 10 5 2 1 0.5 0.2 0 FORWARD CURRENT VS. VOLTAGE EA30QS10/EA30QS10-F Tj=25°C Tj=150°C 0... |
| Features |
3 HALF SINE WAVE RECT 120°
2 RECT 60°
1
0 0 25 50 75 100 125 150 CASE TEMPERATURE ( °C)
0° 180° θ
CONDUCTION ANGLE
3.5
AVERAGE FORWARD CURRENT VS. AMBIENT TEMPERATURE P.C. Board mounted (Print land=20 20mm) EA30QS10/EA30QS10-F
AVERAGE FORWARD CURRENT (A)
3.0 D.C.
2.5
2.0 RECT 180° RECT 120°
1.5 RECT 60°
HALF SINE WAVE.
1.0
0.5
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( °C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load 50 EA30QS10/EA30QS10-F
40
30
20
10
0 0.02
0.02s 0.05
I FSM
0.1 0.2 TIME (s)
0.5
1
2
JUNCTION CAPACITANCE (pF)
JUNCTION CAPACITANCE VS.... |
| Document |
 EA30QS10-F Data Sheet
PDF 140.42KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EA30QS10-F |
Kyocera |
Schottky Barrier Diode |
|
| 2 | EA30QS10 |
Kyocera |
Schottky Barrier Diode |
|
| 3 | EA30QS10 |
Nihon Inter Electronics |
SBD |
|
| 4 | EA30QS03L |
Kyocera |
Schottky Barrier Diode |
|
| 5 | EA30QS03L |
Nihon Inter Electronics |
SBD |
|
| 6 | EA30QS03L-F |
Kyocera |
Schottky Barrier Diode |
|
Desde 2024. D4U Semiconductor.
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