Busque con el número de pieza junto con el fabricante o la descripción
BUK661R6-30C |
Click to view a larger image
| Part Number | BUK661R6-30C |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the app... |
| Features |
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source Tj ≥ 25 °C; Tj ≤ 175 °C voltage ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1 Ptot total power Tmb ... |
| Document |
 BUK661R6-30C Data Sheet
PDF 163.22KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUK661R6-30C |
nexperia |
N-channel TrenchMOS intermediate level FET |
|
| 2 | BUK661R8-30C |
NXP |
N-channel TrenchMOS intermediate level FET |
|
| 3 | BUK661R8-30C |
nexperia |
N-channel MOSFET |
|
| 4 | BUK661R9-40C |
nexperia |
N-channel TrenchMOS intermediate level FET |
|
| 5 | BUK661R9-40C |
NXP Semiconductors |
N-Channel MOSFET |
|
| 6 | BUK6610-75C |
NXP Semiconductors |
N-channel TrenchMOS FET |
|
Desde 2024. D4U Semiconductor.
|