MRF373SR1 |
Part Number | MRF373SR1 |
Manufacturer | Motorola |
Description | ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF373/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode L... |
Features |
60 MHz, 60 W, 28 V LATERAL N –CHANNEL BROADBAND RF POWER MOSFETS CASE 360B –05, STYLE 1 NI –360 MRF373R1 CASE 360C –05, STYLE 1 NI –360S MRF373SR1 MAXIMUM RATINGS Rating Drain –Source Voltage Gate –Source Voltage Drain Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case MRF373SR1 Symbol VDSS VGS ID PD Tstg TJ MRF373SR1 MRF373R1 Symbol RθJC RθJC Value 65 ±20 7 173 1.33 – 65 to +150 200 Max 0.75 1 Unit V... |
Document |
MRF373SR1 Data Sheet
PDF 789.36KB |
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