PTFA220041M |
Part Number | PTFA220041M |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity... |
Features |
• Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR = –44 dBc • Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB • Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB • Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power • In... |
Document |
PTFA220041M Data Sheet
PDF 323.98KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PTFA220081M |
Infineon |
High Power RF LDMOS Field Effect Transistor | |
2 | PTFA220121M |
Infineon |
High Power RF LDMOS Field Effect Transistor | |
3 | PTFA220121M |
Wolfspeed |
High Power RF LDMOS Field Effect Transistor | |
4 | PTFA210301E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTFA210601E |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTFA210601F |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |