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3N90 |
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| Part Number | 3N90 |
| Manufacturer | Unisonic Technologies |
| Description | The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 4.8 Ω @ V... |
| Features |
* RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL Power MOSFET RDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N90L-TA3-T 3N90G-TA3-T 3N90L-TF3-T 3N90G-TF3-T 3N90L-TF1-T 3N90G-TF1-T 3N90L-TF2-T 3N90G-TF2-T 3N90L-TQ2-T 3N90G-TQ2-T 3N90L-TQ2-R 3N90G-TQ2-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel MARKING www.unison... |
| Document |
 3N90 Data Sheet
PDF 265.28KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N90 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 3N90-E |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | 3N90A |
Samsung Electronics |
Advanced Power MOSFET |
|
| 4 | 3N100E |
Motorola |
MTB3N100E |
|
| 5 | 3N1012 |
Infineon |
Power-Transistor |
|
| 6 | 3N10L26 |
Infineon |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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