IRGP4790-EPbF |
Part Number | IRGP4790-EPbF |
Manufacturer | International Rectifier |
Description | VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 75A Applications Industrial Motor Drive UPS Solar Inverters Welding Features Low VCE(ON) and Switc... |
Features |
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant
IRGP4790PbF IRGP4790-EPbF
Insulated Gate Bipolar Transistor
C
G
E
n-channel
G Gate
E GC
IRGP4790PbF TO‐247AC
C Collector
E GC
IRGP4790‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP4790PbF IRGP4790-EPbF
Package Type
TO-247AC TO-... |
Document |
IRGP4790-EPbF Data Sheet
PDF 772.45KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRGP4790D-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGP4790DPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGP4790PBF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
4 | IRGP4740D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
5 | IRGP4740DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor | |
6 | IRGP4750D-EPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |