FDD86102LZ Fairchild Semiconductor N-Channel MOSFET Datasheet. existencias, precio

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FDD86102LZ

Fairchild Semiconductor
FDD86102LZ
FDD86102LZ FDD86102LZ
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Part Number FDD86102LZ
Manufacturer Fairchild Semiconductor
Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Q...
Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. ...

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