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IPB120N08S4-04 |
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| Part Number | IPB120N08S4-04 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB120N... |
| Features |
• N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 Product Summary VDS RDS(on),max (SMD version) ID 80 V 4.1 mW 120 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB120N08S4-04 IPI120N08S4-04 IPP120N08S4-04 Package Marking PG-TO263-3-2 4N0804 PG-TO262-3-1 4N0804 PG-TO220-3-1 4N0804 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25°C, V GS=10V1) T C=100°C, V GS=... |
| Document |
 IPB120N08S4-04 Data Sheet
PDF 785.79KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB120N08S4-03 |
Infineon |
Power-Transistor |
|
| 2 | IPB120N03S4L-03 |
Infineon |
Power-Transistor |
|
| 3 | IPB120N04S3-02 |
Infineon |
Power-Transistor |
|
| 4 | IPB120N04S4-01 |
Infineon |
Power-Transistor |
|
| 5 | IPB120N04S4-02 |
Infineon |
Power-Transistor |
|
| 6 | IPB120N04S4-04 |
Infineon |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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