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IPC302N08N3 |
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| Part Number | IPC302N08N3 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB025N08N3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitive... |
| Features |
rameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS
Min. 80 2 -
Values Typ. Max. -2.8 3.5 0.1 1 1 100 1.22) 1003) 0.7 1.2 454) -
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=270µA µA VGS=0,VDS=80 nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ ID =30 A, RGS =25 Ω
1) packaged in a P-TO263-3 (see ref. product) 2)typicalbaredieRDS(on) 3) limited by... |
| Document |
 IPC302N08N3 Data Sheet
PDF 534.31KB |
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Desde 2024. D4U Semiconductor.
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