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IPD122N10N3G |
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| Part Number | IPD122N10N3G |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPD122N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • ... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD122N10N3 G 100 V 12.2 mW 59 A Package Marking PG-TO252-3 122N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=... |
| Document |
 IPD122N10N3G Data Sheet
PDF 484.01KB |
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Desde 2024. D4U Semiconductor.
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