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SIRA06DP |
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| Part Number | SIRA06DP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | New Product N-Channel 30 V (D-S) MOSFET SiRA06DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0025 at VGS = 10 V 30 0.0035 at VGS = 4.5 V ID (A)a, g 40 40 Qg (Typ.) 22.5 nC Po... |
| Features |
• TrenchFET® Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous Rectification • High Power Density DC/DC • VRMs and Embedded DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs) TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C ... |
| Document |
 SIRA06DP Data Sheet
PDF 339.17KB |
Desde 2024. D4U Semiconductor.
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