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SIR662DP |
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| Part Number | SIR662DP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com SiR662DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) 0.0027 at VGS = 10 V 0.0033 at VGS = 6 V 0.0048 at VGS = 4.5 V ID (A) a 100 PowerPAK®... |
| Features |
• TrenchFET® power MOSFET • 100 % Rg and UIS tested • Low Qg for high efficiency • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Primary side switch • POL • Synchronous rectifier • DC/DC converter • Amusement system • Industrial • LED backlighting D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (60 μs Pulse Width) Continuous Source-Drain Diode Current Single Pulse Avalanche Cu... |
| Document |
 SIR662DP Data Sheet
PDF 381.00KB |
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Desde 2024. D4U Semiconductor.
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