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SIR422DP |
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| Part Number | SIR422DP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | N-Channel 40-V (D-S) MOSFET SiR422DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0066 at VGS = 10 V 40 0.008 at VGS = 4.5 V PowerPAK® SO-8 ID (A)a 40 40 Qg (Typ.) 16.1 nC 6.15 mm D... |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • POL • Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1 mH Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dis... |
| Document |
 SIR422DP Data Sheet
PDF 324.23KB |
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