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MTB6N60E1 |
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| Part Number | MTB6N60E1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the av... |
| Features |
tion
TMOS POWER FET 6.0 AMPERES, 600 VOLTS
RDS(on) = 1.2 W
D2PAK−SL CASE 418C−01
Style 2
D
®G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−Repetitive (tp ≤ 10 ms)
Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 μs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C (V... |
| Document |
 MTB6N60E1 Data Sheet
PDF 204.86KB |
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Desde 2024. D4U Semiconductor.
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