CED95P04 |
Part Number | CED95P04 |
Manufacturer | CET |
Description | CED95P04/CEU95P04 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V. Super high dense cell design for extrem... |
Features |
-40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V. RDS(ON) =12mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
Drain Current-Pulsed a
@ TC = 100 C
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e Operating and Store Te... |
Document |
CED95P04 Data Sheet
PDF 395.35KB |
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